4v drive nch + nch mosfet TT8K11 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) low voltage drive(4v drive). 3) small surface mount package(tsst8). ? application switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 3000 TT8K11 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 3a pulsed i dp ? 12 a continuous i s 0.8 a pulsed i sp 12 a 1.25 w / total 1.0 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit 100 ? c / w/ total 125 ? c / w/ element *mounted on a ceramic board. type source current (body diode) drain current parameter parameter channel to ambient rth (ch-a) p d power dissipation *2 *1 *1 (1) tr1 source (2) tr1 gate (3) tr2 source (4) tr2 gate (5) tr2 drain (6) tr2 drain (7) tr1 drain (8) tr1 drain * tsst8 (1) (2) (3) (4) (8) (7) (6) (5) abbreviated symbol : k11 ?2 ?1 ?2 ?1 (8) (7) (1) (2) (6) (5) (3) (4) ? 1 esd protection diode ? 2 body diode 1/6 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
TT8K11 ? electrical characteristics (ta = 25 q c) symbol min. typ. max. unit gate-source leakage i gss -- r 10 p av gs = r 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 p av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1a -5171 i d =3a, v gs =10v -6794 i d =3a, v gs =4.5v - 78 109 i d =3a, v gs =4v forward transfer admittance l y fs l 2.0 - - s v ds =10v, i d =3a input capacitance c iss - 140 - pf v ds =10v output capacitance c oss - 55 - pf v gs =0v reverse transfer capacitance c rss - 28 - pf f=1mhz turn-on delay time t d(on) -5-nsv dd 15v, i d =1.5a rise time t r - 13 - ns v gs =4.5v turn-off delay time t d(off) - 20 - ns r l =10 : fall time t f -3-nsr g =10 : total gate charge q g - 2.5 - nc v dd 15v, i d =3a gate-source charge q gs - 0.8 - nc v gs =5v gate-drain charge q gd - 0.6 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =3a, v gs =0v *pulsed conditions conditions m : parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8K11 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =2.5v t a =25 c pulsed v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v 0 1 2 3 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =2.5v t a =25 c pulsed v gs =10.0v v gs =4.0v v gs =4.5v v gs =2.8v v gs =3.0v 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.5v t a =25 c pulsed v gs =4.0v v gs =10v 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8K11 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 source current : is [a] source - drain voltage : v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 50 100 150 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage t a =25 c pulsed i d =3.0a i d =1.5a 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 15v v gs =4.5v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 1 2 3 4 5 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =15v i d =3a pulsed 4/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8K11 10 100 1000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =125 c /w rth (ch - a) (t)=r(t) rth (ch - a) 5/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
TT8K11 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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